The density of states in the mobility gap ofa-Si1−x
Ge
x
films |
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| Authors: | F Gozzo R Murri N Pinto L Schiavulli |
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| Institution: | (1) Dipartimento di Matematica e Fisica, Università di Camerino, Gruppo Nazionale di Struttura della Materia, Via Madonna del Carcere, 62032 Camerino, Italia |
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| Abstract: | Summary The density of states distribution (DOS) in the mobility gap of undoped glow-dischargea-Si1-x
Ge
x
: H alloy films was determined by means of field effect tecnique. The specimens were grown at different percentages of Ge.
The DOS of the films shows a behaviour related to the content of germanium and it is independent of the presence of additional
hydrogen in discharge.
The authors of this paper have agreed to not receive the proofs for correction. |
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| Keywords: | Electron density of states determinations |
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