Account of photoelectron elastic determination of overlayer thickness,in-depth profiling,escape depth,attenuation coefficients and intensities in surface systems |
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| Institution: | 1. Laboratory of Chemistry and Electrochemistry of Surfaces (CES), Namur Institute for Structured Matter (NISM), University of Namur, rue de Bruxelles, 61, B-5000 Namur, Belgium;2. Synthesis, Irradiation & Analysis of Materials (SIAM), University of Namur, rue de Bruxelles, 61, B-5000 Namur, Belgium;3. Centre de Recherches Métallurgiques (CRM), Avenue du Bois Saint-Jean 21, B27 – Quartier Polytech 4, B-4000 Liège, Belgium;4. Institute for Materials Research (IMO), Hasselt University, B-3590 Diepenbeek, Belgium;5. IMEC vzw. Division IMOMEC, 3590 Diepenbeek, Belgium |
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| Abstract: | An analytical connection is found between parameters of Monte Carlo and transport theory methods to account for elastic electron scattering in solids. A simple analytical method is proposed for the intensity calculations in X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) with account of elastic scattering. The method is applied for solution of many problems in XPS including determination of the overlayer thickness, correction factors for the in-depth profiling, escape depth, attenuation lengths, intensities in layered systems. |
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