Influence of surface oxidation on the photoelectron diffraction intensities from InP single crystals |
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| Institution: | 1. Beijing Key Laboratory of Environmental Science and Engineering, and School of Materials Science and Engineering, Beijing Institute of Technology, Beijing 100081, China;2. Collaborative Innovation Center of Electric Vehicles in Beijing, Beijing 100081, China |
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| Abstract: | The Monte Carlo method was used to calculate the influence of amorphous overlayers on the angle-dependent intensity distribution due to photoelectron diffraction (XPD) in monocrystalline substrates. The influences of the overlayer thickness, the elastic and inelastic mean free paths in the amorphous overlayer, the shape of the initial intensity distribution, as well as the overlayer chemical composition, on XPD is discussed and some trends are formulated. The simulated P 2p intensities of oxidized InP agree with the experimental data. The effect of elastic scattering on the intensity minimum around the detection angle 18° is stronger than that of inelastic scattering. A new method for the thickness determination of thin overlayers on single ecrystals is discussed. |
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