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Escape probability of O 1s photoelectrons leaving copper oxide |
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| Institution: | 1. Plasma Application Laboratory, Physical Sciences Division, Institute of Advanced Study in Science and Technology, Paschim Boragaon, Garchuk, Guwahati 781035, India;2. Department of Physics, Gauhati University, Guwahati 781014, India;3. Academy of Scientific and Innovative Research (AcSIR), Ghaziabad 201002, India;4. Department of Physics, Bodoland University, Kokrajhar 783370, India |
| Abstract: | The escape probability of O 1s photoelectrons as a function of depth of origin in CuO has been studied experimentally and by the Monte Carlo technique. It has been proved experimentally that the escape probability in the direction of X-ray propagation is no longer described by a simple exponential law but is a complex function with a maximum at a depth of 4–10 Å. The mean escape depth is derived from the experimental data and is compared with the results of theory; satisfactory agreement is obtained. |
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