Self-organized current-density patterns and bifurcations in n-GaAs with a circular symmetry of contacts |
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| Affiliation: | 1. Institut für Experimentelle und Angewandte Physik, Universität Regensburg, 93040 Regensburg, Germany;2. Institut für Angewandte Physik, Universität Münster, Corrensstrasse 2/4, 48149 Münster, Germany;3. Paul-Drude Institut für Festkörperelektronik, Hausvogteiplatz 5-7, 10117 Berlin, Germany;1. Department of Electronic and Electrical Engineering, University of Sheffield, UK;2. Department of Electronics Technology, British Malaysian Institute, Universiti Kuala Lumpur, Malaysia |
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| Abstract: | Self-organized nucleation of current-density filaments has been investigated in an n-GaAs epitaxial layer with circular contact symmetry. The first filament arises from a spatially uniform state, further filaments are generated by filament division processes. Filament growth, filament division and rearrangement of filaments reveal hysteretic behavior accompanied with subcritical bifurcations. |
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