Abstract: | Silicon dioxide (SiO2) thick films have been deposited by plasma enhanced chemical vapor deposition (PECVD) and flame hydrolysis deposition (FHD). PECVD SiO2 films were obtained at low temperatures (<350 °C) by the decomposition of the appropriate mixture of (SiH4+N2O) gases under suitable rf power and N2O/SiH4 ratio. For low N2O/SiH4 ratio, a refractive index(n) value close to 1.50 is obtained. The deposition rate increased with the increase of rf power. FHD SiO2 films were produced by the flame hydrolysis reaction of halide materials such as SiCl4, POCl3 and BCl3 in an oxy‐hydrogen torch. The porous SiO2 layer, under the POCl3/BCl3 ratio deposition condition, has to be consolidated by annealing at around 1300 °C. |