Formation mechanism of incubation layers in the initial stage of microcrystalline silicon growth by PECVD |
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Authors: | Hou Guo-Fu Xue Jun-Ming Guo Qun-Chao Sun Jian Zhao Ying Geng Xin-Hua and Li Yi-Gang |
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Institution: | Institute of Photoelectronics, Nankai University, Tianjin 300071, China; Tianjin Key Laboratory of Photoelectronic Thin Film Devices and Technique, Tianjin 300071, China; Key Laboratory of Optoelectronic Information Science and Technology, Chinese Ministry of Education, Tianjin 300071, China; Institute of Physics, Nankai University, Tianjin 300071, China |
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Abstract: | The incubation layers in microcrystalline silicon films
(\muc-Si:H) are studied in detail. The incubation layers in
\muc-Si:H films are investigated by bifacial Raman spectra,
and the results indicate that either decreasing silane
concentration (SC) or increasing plasma power can reduce the
thickness of incubation layer. The analysis of the in-situ
diagnosis by plasma optical emission spectrum (OES) shows that
the emission intensities of the SiH*(412\,nm) and H_\al
(656nm) lines are time-dependent, thus SiH*/H_\al ratio is
of temporal evolution. The variation of SiH*/H_\al ratio can
indicate the variation in relative concentration of precursor
and atomic hydrogen in the plasma. And the atomic hydrogen plays
a crucial role in the formation of \muc-Si:H; thus, with the
plasma excited, the temporal-evolution SiH*/H_\al ratio has a
great influence on the formation of an incubation layer in the
initial growth stage. The fact that decreasing the SC or
increasing the plasma power can decrease the SiH*/H_\al ratio
is used to explain why the thickness of incubation layer can
reduce with decreasing the SC or increasing the plasma power. |
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Keywords: | microcrystalline silicon incubation layer bifacial Raman measurement optical emission spectrum (OES) |
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