A CAD oriented quasi-analytical large-signal drain current model for 4H-SiC MESFETs

This paper reports that a 4H-SiC MESFET (Metal Semiconductor FieldEffect Transistor) large signal drain current model based onphysical expressions has been developed to be used in CAD tools. Theform of drain current model is based on semi-empirical MESFET model,and all parameters in this model are determined by physicalparameters of 4H-SiC MESFET. The verification of the present modelembedded in CAD tools is made, which shows a good agreement withmeasured data of large signal DC I-V characteristics, PAE (poweradded efficiency), output power and gain.