Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs

Taking the actual operating condition of complementary metal oxidesemiconductor (CMOS) circuit into account, conventional directcurrent (DC) stress study on negative bias temperature instability(NBTI) neglects the detrapping of oxide positive charges and therecovery of interface states under the `low' state of p-channel metaloxide semiconductor field effect transistors (MOSFETs) inverteroperation. In this paper we have studied the degradation and recoveryof NBTI under alternating stress, and presented a possible recoverymechanism. The three stages of recovery mechanism under positive biasare fast recovery, slow recovery and recovery saturation.