Investigation of gate current in nano-scale MOSFETs by Monte Carlo solution of quantum Boltzmann equation

This paper investigates gate current through ultra-thin gate oxide ofnano-scale metal oxide semiconductor field effect transistors(MOSFETs), using two-dimensional (2D) full-band self-consistentensemble Monte Carlo method based on solving quantum Boltzmannequation. Direct tunnelling, Fowler--Nordheim tunnelling andthermionic emission currents have been taken into account for thecalculation of total gate current. The 2D effect on the gate currentis investigated by including the details of the energy distributionfor electron tunnelling through the barrier. In order to investigatethe properties of nano scale MOSFETs, it is necessary to simulategate tunnelling current in 2D including non-equilibrium transport.