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Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes
Authors:Fu Sheng-Hui  Song Guo-Feng and Chen Liang-Hui
Institution:Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Abstract:Usually GaAs/AlGaAs is utilized as an active layer material in laser diodes operating in the spectral range of 800--850 nm. In this work, in addition to a traditional unstrained GaAs/AlGaAs distributed feedback (DFB) laser diode, a compressively strained InGaAlAs/AlGaAs DFB laser diode is numerically investigated in characteristic. The simulation results show that the compressively strained DFB laser diode has a lower transparency carrier density, higher gain, lower Auger recombination rate, and higher stimulated recombination rate, which lead to better a device performance, than the traditional unstrained GaAs/AlGaAs DFB laser diode.
Keywords:InGaAlAs/AlGaAs  distributed feedback laser diode  numerical simulation
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