Comparison of two kinds of active layers for high-power narrow-stripe distributed feedback laser diodes |
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Authors: | Fu Sheng-Hui Song Guo-Feng and Chen Liang-Hui |
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Institution: | Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China |
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Abstract: | Usually GaAs/AlGaAs is utilized
as an active layer material in laser diodes operating
in the spectral range of 800--850 nm. In this work, in addition to a
traditional unstrained GaAs/AlGaAs distributed feedback (DFB) laser diode,
a compressively strained InGaAlAs/AlGaAs DFB laser
diode is numerically investigated in characteristic. The simulation results show that the
compressively strained DFB laser diode has a lower transparency carrier
density, higher gain, lower Auger recombination rate, and higher stimulated
recombination rate, which lead to better a device performance, than
the traditional unstrained GaAs/AlGaAs DFB laser diode. |
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Keywords: | InGaAlAs/AlGaAs distributed feedback laser diode numerical simulation |
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