Polymer thin-film transistor based on a high dielectric constant gate insulator

In this paper full polymer thin-film transistors (PTFTs) based onPoly (acrylonitrile) (PAN) as the gate dielectric and poly(2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene-vinylene) (MEH-PPV)as the semiconductor layer were investigated by using differentchannel width/length ratios. Relatively high dielectric constant ofthe polymer dielectric layer (6.27) can remarkably reduce thethreshold voltage of the transistors to below -3V. Holefield-effect mobility of MEH-PPV of the PTFTs was about4.8×10^-4cm²/Vs, and on/off current ratio was larger than10², which was comparable with that of transistors with widelyused Poly (4-vinyl phenol) (PVP) or SiO₂ as gate dielectrics.