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Q-switched Nd lasers pumped directly into the F3/2 emitting level
Authors:N Pavel  T Dascalu  G Salamu  O Sandu  A Leca  V Lupei
Institution:Laboratory of Solid-State Quantum Electronics, National Institute for Laser, Plasma and Radiation Physics, P.O. Box MG-36, Magurele, Bucharest R-077125, Romania
Abstract:The influence of the direct pumping into the 4F3/2 emitting level on the output characteristics of continuous-wave (CW) pumped, passively or actively (acoustooptic, AO) Q-switched Nd lasers is discussed. In case of passive Q-switching by Cr4+:YAG saturable absorber (SA) crystal, the change of pumping wavelength from 0.81 μm into the highly-absorbing 4F5/2 level to 0.88 μm into the 4F3/2 level of Nd does not modify the energy of the Q-switch pulse, but increases the pulse repetition rate and the laser average power for the same absorbed pump power. This is demonstrated with 0.81 and 0.88 μm CW laser diode-pumped Nd:YAG and Nd-vanadate lasers with average output power in the watt-level range at 1.06 μm. The effect is explained by the control of passive Q-switching by the intracavity photon flux that is influenced by the pump wavelength and by the initial transmission of the SA crystal. On the other hand, it is discussed and experimentally proved that due to the possibility to control externally the frequency of switching, in case of the AO Q-switched Nd laser the change of the pump wavelength from 0.81 to 0.88 μm increases the pulse energy for a fixed frequency, leading to a corresponding increase of the average laser power.
Keywords:42  55  Xi  42  60  Gd  42  60  Da
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