Reflectancevs. Electroreflectance measurements on arsenic-doped silicon crystal

Summary Reflectance and electroreflectance measurements from 2.5 to 5.5 eV, performed on arsenic heavily doped silicon samples, are reported and discussed. Silicon crystals implanted with arsenic up to a fluence of 10¹⁷ cm⁻² were laser irradiated and a free-carrier concentration of the order of 10²¹cm⁻³ was reached. The reordering of the system is studied in detail at different initial conditions. A comparison between reflectance and electro-reflectance appears to be quite useful to determine the behaviour of the heavily doped semiconductor. To speed up publication, the authors of this paper have agreed to not receive the proofs for correction.