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High-power passive mode-locking of a diode pumped Yb:GdVO4 laser |
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| Authors: | H Luo DY Tang GQ Xie HJ Zhang LJ Qin HH Yu LY Ng LJ Qian |
| Institution: | a School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798, Singapore b National Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China c College of Environment and Material Engineering, Yantai University, Yantai 264005, China d Research Facility for Advanced Materials, State Key Laboratory for Advanced Photonic Materials and Devices, Department of Optical Science and Engineering, Fudan University, Shanghai 200433, China |
| Abstract: | Passive mode-locking of a diode pumped Yb-doped GdVO4 crystal laser was demonstrated for the first time to our knowledge. The laser was mode-locked at the wavelength of 1019.1 nm and had an average output power of 1.01 W. The mode-locked pulse duration was 3.1 ps. The laser was end-pumped by a high-power fiber pigtailed laser diode bar and the mode-locking was enabled by a semiconductor saturable absorber mirror (SESAM). |
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