| 化学氧化对多孔硅表面态和光致发光的影响 |
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| 引用本文： | 李经建,刁鹏,蔡生民,侯永田,王昕,张树霖.化学氧化对多孔硅表面态和光致发光的影响[J].物理化学学报,1994,10(8):737-740. |
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| 作者姓名： | 李经建 刁鹏 蔡生民 侯永田 王昕 张树霖 |
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| 作者单位： | Department of Chemistry,Peking University,Beijing 100871,Department of Physics,Peking University,Beijing 100871 |
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| 摘 要： | 自1990年英国科学家Canham发现室温下多孔老（poroussilicon缩写为PS）的可见光区光致发光以来，在世界范围内迅速形成了一股强大的多孔硅研究热．硅是间接禁带半导体．禁带宽度为1．11eV，不可能在可见区发光．对于多孔硅在可见区的强烈荧光发射及其形成，Canham和Lehamm等分别建议可用量子线的尺寸限制效应未解释1,2]．但Tsai和Hance等用FTIR研究经过后处理的多孔老样品3]，认为多孔硅的发光与表面的硅氢化物相关，并提出硅的二氢化物SiH2的浓度与荧光强度相关．关于多孔硅的发光机制，还有非晶态发光4]等说法．因止匕多孔硅的发…
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| 关 键 词： | 多孔硅(PS) 红外光谱 光致发光谱 发光机制 |
| 收稿时间： | 1993-04-08 |
| 修稿时间： | 1993-08-30 |
The Influence of Chemical Oxidation on Surface State and Photoluminescence of Porous Silicon |
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| Li Jingjian, Diao Peng ,Cai Shengmin.The Influence of Chemical Oxidation on Surface State and Photoluminescence of Porous Silicon[J].Acta Physico-Chimica Sinica,1994,10(8):737-740. |
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| Authors: | Li Jingjian Diao Peng Cai Shengmin |
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| Institution: | Department of Chemistry,Peking University,Beijing 100871|Department of Physics,Peking University,Beijing 100871 |
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| Abstract: | The changes in photoluminescence and FTIR spectra of porous silicon subjected to oxidation were exdrined. With the increase of okidizing duxation, the relative amount of the Si-H2 surface species on PS decreases even though the photoluminescence intensity increases. the result suggests that it isn't SiH2 but Si-O and Si-O-Si on theinterface of PS play a key role in enhancing the pllotoluminescence. A complete photoluminescence mechanism should consider the influence of su-rface state of porous silicon based on the quantum codriement effect model. |
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| Keywords: | Porous silicon Fourier transformed infrared transmission spectra Photoluminescence Photoluminescence mechanism |
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