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Electronic and luminescent properties of Cr-doped cadmium sulfide nanowires
Authors:Tang Wei-Hu  Fu Xiu-Li  Zhang Zhi-Yong  Li Ling-Hong
Affiliation: Department of Physics, Center for Optoelectronics materials and Devices, Zhejiang Sci-Tech University, Xiasha College Park, Hangzhou 310018, China; Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China;  Department of Physics, University of Dayton, Dayton, OH 45469, USA
Abstract:Cr-doped CdS nanowires were synthesized in large scale through thermalco-evaporation of CdS and metal Cr powders. General morphology, detailedmicrostructure and optical properties were characterized using varioustechniques. Devices consisting of individual Cr-doped CdS nanowire werefabricated and they exhibited remarkable rectifying characteristics.I-V curves of individual Cr-doped CdS nanowire devices demonstrate that thepresent nanowires are n-type doped and have high conductivity (10.96 Omega-1cm-1, indicating great potential applications in nanoscaleelectronic and optoelectronic devices.
Keywords:CdS nanowires   electrical properties   luminescent properties
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