首页 | 本学科首页   官方微博 | 高级检索  
     


Excitons in direct band gap cubic semiconductors
Affiliation:1. Key Laboratory for Soft Chemistry and Functional Materials of Ministry of Education, School of Chemistry and Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;2. State Key Laboratory of Photocatalysis on Energy and Environment, College of Chemistry, Fuzhou University, Fuzhou 350002, China;3. MIIT Key Laboratory of Advanced Display Material and Devices, School of Materials Science and Engineering, Nanjing University of Science and Technology, Nanjing 210094, China;4. Key Laboratory of Preclinical Study for New Drugs of Gansu Province, School of Basic Medical Sciences, Lanzhou University, Lanzhou 730000, China
Abstract:Perturbation is applied to study of the Wannier-Mott excitons in direct band gap cubic semiconductors with a fourfold degenerate highest valence band. The fine structure of exciton energy levels is investigated. General formulae are derived for the matrix elements of the perturbation. From these expressions it is straightforward to obtain values of the fine structure splittings of the energy levels and the wave functions of corresponding staes in any order of perturbation theory. A comparison with results of previous works is made.
Keywords:
本文献已被 ScienceDirect 等数据库收录!
设为首页 | 免责声明 | 关于勤云 | 加入收藏

Copyright©北京勤云科技发展有限公司  京ICP备09084417号