4H-SiC表面热氧化生长SiOx薄膜特性的研究

采用扫描电子显微镜（SEM）、原子力显微镜（AFM）和X射线光电子能谱（XPS）测试方法对4H-SiC上热氧化生长的氧化硅（SiOx）薄膜表面形貌进行观测，并分析研究SiOx薄膜和SiOx/4H-SiC界面的相关性质，包括拟合Si2p、O1s和C1s的XPS谱线和分析其相应的结合能，以及分析SiOx层中各主要元素随不同深度的组分变化情况，从而获得该热氧化SiOx薄膜的化学组成和化学态结构，并更好地了解其构成情况以及SiOx/4H-SiC的界面性质。

Characteristics of SiOx film grown on 4H-SiC by thermal oxidation

The surface morphology of the SiOx film grown on 4H-SiC by thermal oxidation was observed by scanning electron microscope (SEM) and atomic force microscopy (AFM), respectively. The characteristics of the SiOx film and the interface of SiOx/4H-SiC were studied by X-ray photoelectron spectroscopy (XPS). The Gaussian fitting of Si2p, O1s and C1s XPS energy spectrums and the corresponding binding energy were analyzed. The composition variances of the SiOx film were also researched with XPS measurement on the different depth. The result is expected to find out the chemical composition and state of the SiOx film grown on 4H-SiC by thermal oxidation, and to obtain the characteristic of the SiOx/4H-SiC interface.