InP/In0.53Ga0.47As/InP双异质结双极型晶体管的仿真与分析

运用Silvaco-TCAD软件构建了InP/In_(0.53)Ga_(0.47)As/InP双异质结双极型晶体管模型,研究了掺杂浓度、厚度以及温度对器件特性的影响.结果表明:双异质结双极型晶体管DHBT的开启电压能达到约0.4V,当浓度达到4×10^(19) cm^(-3)的时候,电流增益可以达到一个最佳状态,其峰值能达到约125左右,且浓度对截止频率以及最高振荡频率没有太大的影响;当增大基区厚度时,电流增益会减小,改变厚度能够使DHBT输出特性得以提升,并且提高基区电流的注入;双异质结双极型晶体管具有很好的温度稳定性.

Comparative Simulation and Analysis of InP/In0.53Ga0.47As/InP Double Heterojunction Bipolar Transistors

The InP/In0.53G0.47 As/InP double-heterojunction bipolar transistor model was designed and simulated by using the Silvaco-TCAD software. And the effects of doping concentration, thickness and temperature on the device characteristics were studied by the software. The results show that the opening voltage of Double Heterojunction Bipolar Transistor (DHBT) can reach about 0. 4 V. When the concentration reaches 4 X 1019 cm-3 , the current gain can reach an optimal state, and the peak value can reach about 125 , but has no significant effect on the cut-off frequency and the maximum oscillation frequency. When increasing the thickness of the base region, the current gain was decreased. Changing the thickness can improve the output characteristics of DHBT, and improve the base region current injection. This shows that DHBT have good temperature stability.