Investigation by ellipsometry of the damage in GaAs bombarded with low-energy Ar ions |
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Authors: | I N Koprinarov U Müller-Jahreis P Thiele |
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Institution: | (1) Institut für Physik, Humboldt-Universität zu Berlin, Unter den Linden 6, D-10099 Berlin, Germany |
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Abstract: | The crystalline-amorphous transition in GaAs induced by Ar ions (energy 1–3 keV) has been investigated using single-wavelength ellipsometry. The experiments have been performed in-situ at room temperature. Ion damage straggling, amorphization threshold and critical energy density have been derived by means of a simple analytical model for the growth of the amorphous layer. This model is discussed and the corresponding calculations are found to be in satisfactory agreement with experimental data. |
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Keywords: | 61 80 61 40 78 65 |
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