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集成电路过压保护用ZnO压敏电阻的研制
引用本文:朱传琴,杨志坚,孙兆海,范坤泰.集成电路过压保护用ZnO压敏电阻的研制[J].电子元件与材料,2006,25(8):55-57.
作者姓名:朱传琴  杨志坚  孙兆海  范坤泰
作者单位:山东电力高等专科学校,山东,济南,250002;山东大学电气工程学院,山东,济南,250061;淄博宇海电子陶瓷有限公司,山东,淄博,255202;山东大学信息科学与工程学院,山东,济南,250061
摘    要:为获得集成电路过电压保护用低压压敏电阻,以中压ZnO压敏电阻的配方为基础,通过研究与实验,确定了采用添加晶粒助长剂TiO2和籽晶、晶界稳定剂硼银玻璃和Ta2O5,低温烧结等途径,研制出了低压ZnO压敏电阻。测试结果表明,该ZnO压敏电阻的压敏电压为15~25V,漏电流小(<2μA),非线性特性好(α>29)。

关 键 词:电子技术  低压压敏电阻  晶粒  晶界  Ta2O5
文章编号:1001-2028(2006)08-0055-03
收稿时间:2006-06-14
修稿时间:2006-06-14

Development of ZnO Varistors Used for Overvoltage Protection of Integrated Circuits
ZHU Chuan-qin,YANG Zhi-jian,SUN Zhao-hai,FAN Kun-tai.Development of ZnO Varistors Used for Overvoltage Protection of Integrated Circuits[J].Electronic Components & Materials,2006,25(8):55-57.
Authors:ZHU Chuan-qin  YANG Zhi-jian  SUN Zhao-hai  FAN Kun-tai
Institution:1. Shandong Electric Power College, Jinan 250002, China; 2. College of Electricity and Engineering Shandong University, Jinan 250061, China; 3. College of Information Science and Engineering Shandong University, Jinan 250061, China; 4. Zibo Yuhai Electroceramic Co., Ltd., Zibo 255202, China
Abstract:In order to make lower voltage varistors used for overvoltage protection in integrated circuit, based on the proportioning of middle voltage ZnO varistors, study and experiment were done. Lower voltage varistors have been developed by adding grain promoters of TiO2 and crystallons, applying grain boundary stabilizers of B-Ag glass and Ta2O5, using lower sintering temperature and so on. Obtained results indicate that the varistors have lower varistor voltage of 15~ 25 V, little leakage current (<2 μA) and outstanding nonlinear I-V characteristics (α >29).
Keywords:Ta2O5
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