Hysteretic behavior of angular dependence of exchange bias in FeNi/FeMn bilayers |
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Authors: | Gao T R Yang D Z Zhou S M Chantrell R Asselin P Du J Wu X S |
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Affiliation: | The State Key Lab for Advanced Photonic Materials Devices, Fudan University, Shanghai 200433, China. |
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Abstract: | For FeNi/FeMn bilayers, the angular dependence of exchange bias shows hysteresis between clockwise and counterclockwise rotations, as a new signature. The hysteresis decreases for thick antiferromagnet layers. Calculations have clearly shown that the orientation of antiferromagnet spins also exhibits hysteresis between clockwise and counterclockwise rotations. This furnishes an interpretation of the macroscopic behavior of the ferromagnetic layer in terms of the thermally driven evolution of the magnetic state of the antiferromagnet layer. |
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