Filling-factor-dependent magnetophonon resonance in graphene |
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Authors: | Goerbig M O Fuchs J-N Kechedzhi K Fal'ko Vladimir I |
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Institution: | Laboratoire de Physique des Solides, Université Paris-Sud, CNRS UMR 8502, F-91405, Orsay, France. |
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Abstract: | We describe a peculiar fine structure acquired by the in-plane optical phonon at the Gamma point in graphene when it is brought into resonance with one of the inter-Landau-level transitions in this material. The effect is most pronounced when this lattice mode (associated with the G band in graphene Raman spectrum) is in resonance with inter-Landau-level transitions 0 --> +, 1 and -, 1 --> 0, at a magnetic field B{0} approximately 30 T. It can be used to measure the strength of the electron-phonon coupling directly, and its filling-factor dependence can be used experimentally to detect circularly polarized lattice vibrations. |
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