Tunneling anisotropic magnetoresistance and spin-orbit coupling in Fe/GaAs/Au tunnel junctions |
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| Authors: | Moser J Matos-Abiague A Schuh D Wegscheider W Fabian J Weiss D |
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| Affiliation: | Institut für Experimentelle und Angewandte Physik, Universit?t Regensburg, 93040 Regensburg, Germany. |
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| Abstract: | We report the observation of tunneling anisotropic magnetoresistance effect in the epitaxial metal-semiconductor system Fe/GaAs/Au. The observed twofold anisotropy of the resistance can be switched by reversing the bias voltage, suggesting that the effect originates from the interference of the spin-orbit coupling at the interfaces. Corresponding model calculations reproduce the experimental findings very well. |
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