Charging of glassy chalcogenide semiconductors in corona discharge and its effect on holographic grating formation

Recording of optical holographic gratings based on photostructural transformations in thin (≈ 1 μm) As₂S₃ and As₂S₃ semiconductor layers in the presence and absence of a corona discharge and also chemical etching of these gratings are studied. Initiation of a corona at the stage of interference grating recording is shown to improve the exposure contrast of metal-glassy chalcogenide semiconductor thin-film structures. The holographic sensitivity, diffraction efficiency, dynamic range, and contrast are also improved severalfold. When phase relief gratings formed in these layers are selectively etched in a chemical etchant in the presence of a corona, their profile becomes more regular and deeper by 25–30% and the diffraction efficiency increases by 30–50%.