Photoelectric properties of nInSb-nPbTe-nCdTe isotype structure prepared by vacuum pulsed-laser deposition technique |
| |
| Authors: | K E Avjyan G H Vardanyan R P Grigoryan A M Khachatryan |
| |
| Institution: | (1) Institute of Radiophysics and Electronics, NAS of Armenia, Ashtarak, Armenia;(2) Yerevan State University, Yerevan, Armenia |
| |
| Abstract: | With use of the vacuum pulsed-laser deposition technique an isotype nInSb-nPbTe-nCdTe structure is fabricated. Spectral dependence of photoresponse of the obtained structure is studied at the temperature 120 K. In the curve of spectral dependence a change in the sign of photoresponse is observed for both zero bias and external voltage. Qualitative explanation of this phenomenon is given. |
| |
| Keywords: | nInSb-nPbTe-nCdTe isotype structure photoresponse spectral dependence |
| 本文献已被 SpringerLink 等数据库收录！ |
