Dislocation spectroscopy of crystals |
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Authors: | S Z Shmurak |
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Institution: | (1) Institute of Solid State Physics, Russian Academy of Sciences, 142432 Chernogolovka, Moscow District, Russia |
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Abstract: | A new method of studying the energy characteristics of dislocations is proposed, which is based on the investigation of the
interaction of moving dislocations with purposefully introduced electronic and hole centers. A study has been made of KCl,
NaCl, KBr, LiF, and KI alkali halide crystals containing electronic F and hole V
K and Me
++ (Cu++, Ag++, Tl++, In++) centers. Investigation of the temperature dependence of the dislocation interaction with the F centers permitted determination of the position of the dislocation-induced electronic band (DEB) in the band diagram of the
crystal. In KCl, the DEB is separated by ≈2.2 eV from the conduction-band minimum. It is shown that dislocations transport
holes from the centers lying below the dislocation-induced hole band (DHB) (X
+, In++, Tl++, V
K) to those above the DHB (the Cu+ and Ag+ centers). Such a process is temperature independent. The DHB position in the crystal band diagram has been determined; in
KCl it is separated by ≈1.6 eV from the valence-band top. The effective radii of the dislocation interaction with the electronic
F and hole X
+, V
K, and Tl++ centers have been found.
Fiz. Tverd. Tela (St. Petersburg) 41, 2139–2146 (December 1999) |
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