| 4H-SiC衬底表面SiC薄膜的同质外延生长 |
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| 引用本文： | 刘忠良,康朝阳,唐军,徐彭寿.4H-SiC衬底表面SiC薄膜的同质外延生长[J].人工晶体学报,2012,41(1):106-109,114. |
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| 作者姓名： | 刘忠良 康朝阳 唐军 徐彭寿 |
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| 作者单位： | 1. 淮北师范大学物理与电子信息学院,淮北 235000;
2. 中国科学技术大学国家同步辐射实验室,合肥,230029 |
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| 基金项目： | 安徽省高等学校省级自然科学研究，安徽省自然科学基金，国家自然科学基金 |
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| 摘 要： | 以4H-SiC为衬底,在不同衬底温度下进行SiC薄膜的同质外延生长。利用反射式高能电子衍射(RHEED)、扫描电子显微镜(SEM)、拉曼(Raman)等测试手段,对生长样品的结构和结晶质量进行了表征。根据测试结果发现,在衬底温度为1200℃时能够得到质量较高的薄膜,在另外两个温度(1100℃和1300℃)条件下得到的薄膜质量是较差的。
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| 关 键 词： | 碳化硅薄膜 固源分子束外延 碳化硅衬底 |
Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate |
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| LIU Zhong-liang
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KANG Chao-yang
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TANG Jun
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XU Peng-shou.Homoepitaxial Growth of SiC Thin Film on 4H-SiC Substrate[J].Journal of Synthetic Crystals,2012,41(1):106-109,114. |
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| Authors: | LIU Zhong-liang KANG Chao-yang TANG Jun XU Peng-shou |
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| Institution: | 1.School of Physics and Electronic Information,Huaibei Normal University,Huaibei 235000,China;2.National Synchrotron Radiation Laboratory,University of Science and Technology of China,Hefei 230029,China)(Received 9 September 2011,accepted 3 November 2011) |
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| Abstract: | The SiC thin films were grown on 4H-SiC substrates at different substrate temperatures.The structure and crystalline quality of the SiC thin film were characterized by reflection high energy electron diffraction(RHEED),Raman scattering spectroscopy and scanning electron microscope(SEM).The results indicated that the SiC film with better crystalline quality was obtained at the substrate temperature of 1200℃.However the crystalline quality of the films fabricated at lower substrate temperature(1100 ℃) and higher substrate temperature(1300 ℃) were poorer. |
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| Keywords: | SiC film SSMBE SiC substrate |
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