| LED用硅掺杂GaAs晶体的生长与表征 |
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| 引用本文： | 金敏,徐家跃,房永征,何庆波,周鼎,申慧. LED用硅掺杂GaAs晶体的生长与表征[J]. 人工晶体学报, 2012, 41(3): 594-598 |
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| 作者姓名： | 金敏 徐家跃 房永征 何庆波 周鼎 申慧 |
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| 作者单位： | 上海应用技术学院材料科学与工程学院,上海,200235 |
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| 基金项目： | National Natural Science Foundation of China，Shanghai Science and Technology Committee，Shanghai Education Commission |
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| 摘 要： | 采用坩埚下降法生长了LED用硅掺杂<511>取向的GaAs晶体.选用带籽最槽的PBN坩埚作为生长容器,密封在石英安瓶中以防止生长过程中As蒸汽挥发.研究了掺杂工艺、固液界面形貌和生长缺陷.结果表明:孪晶化是硅掺杂GaAs晶体生长的主要问题.探讨了孪晶形成机理,优化了生长工艺,成功获得了直径2英寸高质量的硅掺杂GaAs晶体,双摇摆曲线显示所得晶体的FWHM为40 arcsec.
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| 关 键 词： | GaAs 晶体生长 坩埚下降法 硅掺杂 孪晶, |
Growth and Characterization of Si-doped GaAs Crystals for LED Application |
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| JIN Min , XU Jia-yue , FANG Yong-zheng , HE Qing-bo , ZHOU Ding , SHEN Hui. Growth and Characterization of Si-doped GaAs Crystals for LED Application[J]. Journal of Synthetic Crystals, 2012, 41(3): 594-598 |
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| Authors: | JIN Min XU Jia-yue FANG Yong-zheng HE Qing-bo ZHOU Ding SHEN Hui |
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| Affiliation: | (School of Materials Science and Engineering,Shanghai Institute of Technology,Shanghai 200235,China) |
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| Abstract: | Si-doped <511>orientation GaAs crystal was grown by Bridgman method.PBN crucible with a seed well was used and quartz ampoule was adopted to protect the evaporation of As in the process of growth.The doping technology,solid-liquid interface morphology and growth defects were investigated.The twinning was a crucial problem for the pulling-down growth of Si-doped <511> GaAs crystal.The formation mechanism of the twins was suggested and the growth parameters were optimized.2-inch Si-doped GaAs crystal has been grown successfully and X-ray rocking curve showed that FWHM was about 40 arcsec. |
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| Keywords: | GaAs crystal growth pulling-down method Si-doped twins |
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