| CVT一步生长的ZnSe单晶的光电特性研究 |
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| 引用本文： | 李寒松,李焕勇. CVT一步生长的ZnSe单晶的光电特性研究[J]. 人工晶体学报, 2012, 41(2): 290-293,297 |
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| 作者姓名： | 李寒松 李焕勇 |
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| 作者单位： | 西北工业大学材料学院凝固技术国家重点实验室,西安,710072 |
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| 基金项目： | 国家自然科学基金，国家高技术研究发展计划(863) |
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| 摘 要： | 本文采用化学气相输运(CVT)法,由Zn(5N)和Se(5N)一步直接生长了片状ZnSe单晶,并对其结构特性和光电性能进行分析。研究表明,生长出的ZnSe单晶仅显露(111)面,红外透过率约为40%～42%,具有较高的结晶质量。该ZnSe单晶可与In电极形成良好的欧姆接触,其体电阻率约为7.3×109Ω.cm。
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| 关 键 词： | 化学气相输运法 ZnSe单晶 光电特性 透过率 电阻率 |
Photoelectric Properties of ZnSe Single Crystal Grown by One-step CVT Method |
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| LI Han-song , LI Huan-yong. Photoelectric Properties of ZnSe Single Crystal Grown by One-step CVT Method[J]. Journal of Synthetic Crystals, 2012, 41(2): 290-293,297 |
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| Authors: | LI Han-song LI Huan-yong |
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| Affiliation: | (State Key Laboratory of Solidification Processing,School of Materials,Northwestern Polytechnical University,Xi’an 710072,China) |
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| Abstract: | ZnSe single crystal silice was directly grown from elemental Zn(5N) and Se(5N) sources by chemical vapor transport(CVT) method.The structure and photoelectric properties of the as-grown ZnSe slice were studied.The as-grown ZnSe slice is single crystalline oriented along(111) direction,has the infrared transmittance in the range of 40%-42%,and of high crystalline quality.The ZnSe slice could form a stable ohmic contact with In electrode and the I-V measurement shows that the resistivity of the ZnSe slice is 7.3×109 Ω·cm. |
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| Keywords: | chemical vapor transport ZnSe single crystal photoelectric properties transmittance resistivity |
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