硅基AAO模板内电化学沉积ZnO纳米线及其光电性能研究

本文利用二次阳极氧化法在p型低阻〈100〉晶向的硅衬底上制备了AAO/Si,以硅基AAO为辅助模板,采用电化学沉积的方法以Zn(NO3).6H2O和HMT(C6H12N4)为原料,在80℃的水浴槽中制备了ZnO纳米线结构。采用SEM,XRD和拉曼光谱等手段对ZnO/AAO/Si复合结构进行表征。SEM图表明ZnO纳米线已成功组装到AAO/Si模板里,直径约45 nm,长度约为600 nm。XRD和拉曼光谱表明ZnO具有六角纤锌矿多晶结构。光致发光(PL)谱图表明ZnO/AAO/Si复合结构在565 nm附近有较宽黄绿发射峰,在395 nm附近有微弱的紫外发射峰。场发射测试结果表明,ZnO纳米线的场增强因子的β值为2490,场增强因子很高,具有广泛的应用前景。

Study on Preparation and Photoelectric Properties of ZnO Nanowires within AAO/Si Substrate by Electrodeposition Process

AAO/Si substrate was prepared by a two-step anodization of aluminum film on the Si substrate.ZnO nanowires were synthesized by electrodeposition process at 80 ℃ in the water bath slot using zinc nitrate hexahydrate and diethylenetriamine with silica AAO template for auxiliary.The structure and optical properties of ZnO/AAO/Si composite structure were characterized by scanning electron microscopy(SEM),X-ray diffraction(XRD),Raman spectra and so on.Scan electron microscopy(SEM) results indicate that ZnO nanowires have been embedded into AAO/Si,whose diameter and length are 45 nm and 600 nm respectively.X-ray diffraction(XRD) and micro-Raman spectra indicated that ZnO have a hexagonal wurtzite structure.Photoluminescence(PL) spectra demonstrate that there is a strong yellow and green peak at 565 nm,and a weak purple emission at about 395 nm,which is the kind of peak of ZnO.The field emission(FE) results show that the enhanced factor β of ZnO in the ZnO/ AAO/Si composite structure is 2490.The high enhanced factor of this kind of ZnO have some potential practical applications in filed emission.