热蒸发制备CdSe薄膜及其光电特性研究

采用真空热蒸发法技术制备CdSe薄膜,通过XRD、SEM、Hall效应和分光光度计测试了薄膜的结构、表面形貌、I-V特性和光学透过率。结果表明:CdSe薄膜(100)晶面的面间距为0.369 nm,晶粒大小约为10.2 nm,薄膜表面晶粒分布较为均匀;CdSe薄膜与锡和银的肖特基势垒高度分别为0.76 V和0.69 V;CdSe薄膜的光透过率在远红外区较高,且呈上升趋势;折射率随波长增加按指数规律减小;根据Tauc关系和Urbach规则,获得能量带隙为1.79 eV和Urbach能量为0.217 eV。

Research on Photoelectrical Properties of CdSe Thin Film Prepared by Thermal Evaporated Method

CdSe thin films was deposited by vacuum thermal evaporating.The structure,surface morphology,current-voltage characteristics and the optical transmission of CdSe thin films were investigated by XRD,SEM,Hall effect and spectrophotometer,respectively.The results show that the distance of(100) plane is 0.369 nm and the particle size is 10.2 nm,the particles deposited are fairly uniform.The barrier height of Sn/CdSe and Ag/CdSe junctions come out to be 0.76 V and 0.69 V.The spectral dependence of the transmittance shows that the transmission is also high in the far-infrared regions and has a ascend trend.Based on the transmission,tuning curve of CdSe thin film on the refractive index vs wavelength is gained by calculating,and the refractive index decreased as a exponential function with increase of wavelength.By Tauc relations and Urbach regulations,energy band gap of CdSe thin film was 1.79 eV,and Urbach energy of absorption edge was calculated to be 0.217 eV.