| Zn掺杂Z形GaN纳米线的制备及表征 |
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| 引用本文： | 梁建,王晓宁,张华,刘海瑞,王晓斌,许并社. Zn掺杂Z形GaN纳米线的制备及表征[J]. 人工晶体学报, 2012, 41(1): 36-41,46 |
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| 作者姓名： | 梁建 王晓宁 张华 刘海瑞 王晓斌 许并社 |
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| 作者单位： | 太原理工大学新材料界面科学与工程教育部重点实验室,太原 030024;太原理工大学材料科学与工程学院,太原 030024 |
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| 基金项目： | 山西省回国留学人员重点资助项目 |
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| 摘 要： | 本文以氧化镓、氧化锌和氨气为原料,通过常压化学气相沉积法(APCVD)在Au/Si(100)衬底上成功生长出了Zn掺杂的"Z"形GaN纳米线。利用场发射扫描电镜(FESEM)、X-射线衍射仪(XRD)、透射电子显微镜(TEM)、光致发光谱(PL)等测试方法对样品的形貌、晶体结构及光学性质进行了表征。结果表明:在温度为950℃,氧化镓和氧化锌的质量比为8∶1的条件下,制备出的Zn掺杂Z形GaN单晶纳米线直径为70 nm、长度为数十个微米,生长机理遵循VLS机制。Zn元素的掺杂使GaN纳米线在420 nm处出现了光致发光峰,发光性能有所改善。
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| 关 键 词： | 氮化镓 纳米线 Zn掺杂 化学气相沉积 发光性能 |
Synthesis and Characterization of Zn-doped GaN Zigzag Nanowires |
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| LIANG Jian , WANG Xiao-ning , ZHANG Hua , LIU Hai-rui , WANG Xiao-bin , XU Bing-she. Synthesis and Characterization of Zn-doped GaN Zigzag Nanowires[J]. Journal of Synthetic Crystals, 2012, 41(1): 36-41,46 |
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| Authors: | LIANG Jian WANG Xiao-ning ZHANG Hua LIU Hai-rui WANG Xiao-bin XU Bing-she |
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| Affiliation: | 1,2(1.Key Laboratory of Interface Science and Engineering in Advanced Materials of Taiyuan University of Technology,Ministry of Education,Taiyuan 030024,China;2.College of Material Science and Engineering,Taiyuan University of Technology,Taiyuan 030024,China)(Received 23 September 2011,accepted 4 November 2011) |
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| Abstract: | High-purity Zn-doped GaN Zigzag nanowires were synthesized on the Au/Si(100) substrate by atmospheric pressure chemical vapor deposition method(APCVD) using gallium oxide,zinc oxide and ammonia as raw materials.Microstructures,morphology and photoluminescence property of the nanowires were characterized by field emission scan electron microscopy(FESEM),X-ray diffractometry(XRD),transmission electron microscopy(TEM) and photoluminescence spectroscopy(PL).The result show that: When the temperature is 950 ℃ and the mass ratio of the reactants is Ga2O3∶ZnO=8∶1,a high density of Zn-doped GaN Zigzag nanowires was obtained.The diameter of single-crystal GaN nanowires was about 70 nm,and length was about several tens of micron.The growth mechanism of this kind followed VLS model.Furthermore,room-temperature photoluminescence of Zn-doped GaN nanowires shows emission peaks at 420 nm,and the luminescence property was improved. |
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| Keywords: | GaN nanowires Zn-doped chemical capor deposition luminescence property |
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