硫化时间对CuInS2薄膜微结构的影响

采用磁控溅射技术在镀Mo玻璃基片上沉积Cu-In金属预制膜后在N2气氛下硫化制备CuInS2薄膜。研究热处理硫化时间对CuInS2薄膜的表面形貌和晶相结构性能的影响。利用场发射扫描电镜(FE-SEM)、X射线衍射(XRD)和Raman光谱等测试手段对薄膜的表面形貌和晶相结构进行表征。实验结果表明,采用磁控溅射金属预制膜经适当的时间硫化所制备的CuInS2薄膜为黄铜矿结构,随着硫化时间的增加,CuInS2薄膜的晶粒的形貌由球形结构向片状结构转化,并且硫化时间越长,所得薄膜的结晶性能越好,但过长的硫化时间会生成Cu-Au相而导致薄膜质量的劣化。

Effects of Sulfurization Time on Microstructure of CuInS2 Films

Copper indium disulfide thin films were prepared on Mo-coated glass substrates by sulfurization treatment in N2 atmosphere of the Cu-In metallic precursors deposited by magnetron sputtering.The effects of sulfurization time on the surface morphology and microstructures of the resulting thin films were investigated.The microstructures of CuInS2 absorber films were characterized by field emission scanning electron microscopy(FE-SEM),X-ray diffraction(XRD) and Raman spectroscopy.The results indicated that with proper sulfurization time the resulting CuInS2 thin films have chalcopyrite structure,the grains morphology evolves from spherical structure into sheet structure,the crystallinity of the CuInS2 films gets better with the increase of sulfurization time.However,the Cu-Au phase occurs in the films treated for too long time,making the films quality worse.