多晶Si薄膜表面金催化Si纳米线生长

以Au膜作为催化剂和大晶粒多晶Si薄膜为衬底,利用固-液-固生长机制,制备出直径在30～ 100 nm和长度为几百微米的高密度Si纳米线.实验研究了退火温度、生长时间和N2流量对Si纳米线生长的影响.结果表明,随着退火温度的升高,生长时间的延长和N2流量的增加,Si纳米线的长度和密度都显著增加.对不同生长时间下获得的Si纳米线样品进行了X射线衍射测量,结果显示随着生长时间的延长,多晶Si薄膜和表面的Au膜成分都在减少.光致发光谱则显示出弱的蓝光发射和强的红光发射特性,前者应是由非晶SiOx壳层中的氧空位发光中心引起,后者则应归因于Si纳米线芯部与非晶SiOx壳层之间界面区域附近中的Si =O双键态或非桥键氧缺陷中心.

Au Catalytic Growth of Silicon Nanowires on Polycrystalline Silicon Thin Films

High density silicon nanowires catalyzed by Au films were grown from large grain polycrystalline silicon films using solid-liquid-solid mechanism.The diameter and length of silicon nanowires are 30-100 nm and several hundreds of micrometers,respectively.The influence of annealing temperature,growth time and N2 flow rate on the formation of the nanowires were investigated.The results confirmed that the density and length of nanowires increased significantly as the annealing temperature,growth time and N2 flow rate increasing.X-ray diffraction of silicon nanowires grown at different time showed that content of polycrystalline silicon film and surface Au film decreased as the growth time increasing,the photoluminescence spectra of corresponding samples indicated weak blue light emission and strong red light emission characteristics,the former should be caused by the oxygen vacancies light emission centres in SiOx shells and the later results from the Si=O double band states or NBOHC located at interfacial regions.