Dark and photomagnetoresistance in semi-magnetic semiconductors |
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| Authors: | M. Lindström P. Kuivalainen J. Heleskivi R. R. Galazka |
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| Affiliation: | (1) Department of Electrical Engineering Electron Physics Laboratory and Technical Research Centre of Finland Semiconductor Laboratory, Helsinki University of Technology, Otakaari 5A, SF-02150 Espo 15, Finland;(2) Present address: Institute of Physics, Polish Academy of Sciences, Warsaw, Poland |
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| Abstract: | Summary Magnetic-field dependence of electron mobility and photoconductivity in semi-magnetic semiconductors are studied both theoretically and experimentally. The electron relaxation times due to various scattering mechanisms are calculated paying special attention to spin disorder and alloy scatterings. The calculated mobility in Cd1−c Mn c Te is compared with experimental photomagnetoresistance (PMR) results. It is concluded that the magnetic-field-dependent mobility may contribute significantly to PMR at high Mn concentrations and low temperatures. Paper presented at the ?V International Conference on Ternary and Multinary Compounds?, held in Cagliari, September 14–16, 1982. |
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| Keywords: | Optical properties and materials |
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