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类钠Ni~(17+)离子双电子复合过程理论研究
引用本文:李传莹,刘晓菊,孟广为,王建国.类钠Ni~(17+)离子双电子复合过程理论研究[J].物理学报,2010,59(9):6044-6051.
作者姓名:李传莹  刘晓菊  孟广为  王建国
作者单位:(1)北京应用物理与计算数学研究所,北京 100088; (2)中国科学院等离子体物理研究所,合肥 230031
基金项目:国家自然科学基金(批准号:10974021)资助的课题.
摘    要:使用基于相对论多组态方法的FAC程序,研究了类钠Ni17+(3s)离子通过双激发态Ni16+(3pnl,3dnl)(Δn=0激发)的双电子复合过程,得到了态选择的双电子复合截面和速率系数,并与文献中的实验和理论数据进行了对比.结果发现,计算通过3p3/210l和3p1/211l共振态的双电子复合积分截面在实验误差范围内与实验测量很好地符合,并好于全相对论的多体微扰理论计算结果.结合量子亏损理论,发现包含高里德伯态的共振双激发态的辐射跃迁和自电离速率具有较好的标度关系,利用该关系给出了近激发阈值的所有共振态的双电子复合积分截面和速率系数.比较3pnl和3dnl两个系列,发现在低温(大约小于100eV)等离子体情况下前者速率系数比后者大,更高的温度后者大.

关 键 词:双电子复合过程  FAC程序  量子亏损理论  速率系数
收稿时间:2009-09-28

Theoretical study of the dielectronic recombination process of Ni17+ ions
Li Chuan-Ying,Liu Xiao-Ju,Meng Guang-Wei,Wang Jian-Guo.Theoretical study of the dielectronic recombination process of Ni17+ ions[J].Acta Physica Sinica,2010,59(9):6044-6051.
Authors:Li Chuan-Ying  Liu Xiao-Ju  Meng Guang-Wei  Wang Jian-Guo
Institution:Institute of Applied Physics and Computational Mathematics,Beijing 100088, China;Institute of Plasma Physics, Chinese Academy of Sciences,Hefei 230031, China;Institute of Applied Physics and Computational Mathematics,Beijing 100088, China;Institute of Applied Physics and Computational Mathematics,Beijing 100088, China
Abstract:We studied the dielectronic recombination processe of Ni17+(3s) through the resonant doubly excited states Ni16+(3pnl,3dnl) (Δn=0) using the Flexible Atomic Code (FAC) which is based on a relativistic configuration interaction method. We obtained the cross sections and the rate coefficients and compared them with the experimental data and other theoretical results. The integrated cross sections through the resonant doubly excited states 3p3/210l and 3p1/211l are in a good agreement with the measurements within the experimental errors. In combination with quantum defect theory, we have found out that the radiative rates and the auger rates of the resonant doubly excited states involving high Rydberg states obey a good scaling law, by means of which we obtained the integrated cross sections and the rate coefficients of all the resonances close to the thresholds. A comparison of the series 3pnl and 3dnl indicates that the rate coefficients of the former are larger when the temperature is below ~100 eV, and are smaller when the temperature is higher.
Keywords:dielectronic recombination  FAC code  quantum defect theory  rate coefficient
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