| 应变层异质结ZnS/ZnSe、ZnS/ZnSxSe1-x和ZnSe/ZnSxSe1-x价带带阶的研究 |
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| 引用本文： | 蔡淑惠,王仁智.应变层异质结ZnS/ZnSe、ZnS/ZnSxSe1-x和ZnSe/ZnSxSe1-x价带带阶的研究[J].发光学报,1998,19(4):293-299. |
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| 作者姓名： | 蔡淑惠 王仁智 |
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| 作者单位： | 厦门大学物理系, 厦门 361005 |
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| 基金项目： | 国家和福建省自然科学基金;国家教委博士点专项基金 |
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| 摘 要： | 采用基于原子球近似下线性Mufin-Tin轨道(LMTO-ASA)的平均键能计算方法,研究了以ZnSxSe1-x为衬底,沿(001)方向外延生长的应变层异质结ZnS/ZnSe、ZnS/ZnSxSe1-x和ZnSe/ZnSxSe1-x的价带带阶值ΔEv(x).研究表明,ΔEv(x)值随衬底合金组分x单调变化。且两者的关系是非线性的。在此计算结果与其它理论计算和实验结果符合较好。
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| 关 键 词： | ZnS/ZnSe、ZnS/ZnSxSe1-x和ZnSe/ZnSxSe1-x异质结 价带带阶 平均键能 |
| 收稿时间： | 1997-11-25 |
VALENCE BOND OFFSETS OF STRAINED HETEROJUNCTION ZnS/ZnSe,ZnS/ZnSxSe1-x AND ZnSe/ZnSxSe1-x |
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| Cai Shuhui,Wang Renzhi,Zheng Yongmei,Zheng Jincheng.VALENCE BOND OFFSETS OF STRAINED HETEROJUNCTION ZnS/ZnSe,ZnS/ZnSxSe1-x AND ZnSe/ZnSxSe1-x[J].Chinese Journal of Luminescence,1998,19(4):293-299. |
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| Authors: | Cai Shuhui Wang Renzhi Zheng Yongmei Zheng Jincheng |
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| Institution: | Department of Physics, Xiamen University, Xiamen 361005 |
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| Abstract: | The valence band offset ΔEv(Ev) at strained ZnS/ZnSe, ZnS/ZnSxSe1-x and ZnSe/ZnSxSe1-x (001) interfaces as a function of the alloy composition x of ZnSxSe1-x substrates are studied, usting the average bond energy theory based on LMTO ASA method. It is shown that the variation of ΔEv(x) with x is monotonous and nonlinear to some extent. The calculation results are rather good compared with the theoretical and experimental data previously reported. |
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| Keywords: | heterojunction ZnS/ZnSe ZnS/ZnSxSe1-x and ZnSe/ZnSxSe1-x valence band offsets average bond energy |
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