An Offset‐Compensated LVDS Receiver with Low‐Temperature Poly‐Si Thin Film Transistor |
| |
Authors: | Kyungyoul Min Changsik Yoo |
| |
Abstract: | The poly‐Si thin film transistor (TFT) shows large variations in its characteristics due to the grain boundary of poly‐crystalline silicon. This results in unacceptably large input offset of low‐voltage differential signaling (LVDS) receivers. To cancel the large input offset of poly‐Si TFT LVDS receivers, a full‐digital offset compensation scheme has been developed and verified to be able to keep the input offset under 15 mV which is sufficiently small for LVDS signal receiving. |
| |
Keywords: | LVDS receiver poly‐Si TFT offset‐compensation |
|