Monte carlo simulations of growth modes of Pb nanoislands on Si(111) surface |
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Authors: | Z Kuntová Z Chvoj M C Tringides M Yakes |
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Institution: | (1) Institute of Physics, AS CR, v.v.i., Na Slovance 2, 182 21 Prague 8, Czech Republic;(2) Ames Laboratory-USDOE, Iowa State University, Ames, Iowa 50011, USA |
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Abstract: | The growth of Pb islands on a Si(111) surface exhibits many interesting properties. For example, the self-assembled process
results in a homogeneous distribution of Pb islands with uniform height. The dependence of this height on coverage and temperature
can be expressed as a phase diagram 1]. In this paper we develop a model of the growth process that reflects the main features
of the experimental observations and determines the key processes of quantum dot formation in a Pb/Si(111) system. The growth
of islands is simulated by the Monte Carlo method. With suitably chosen parameters the model is able to reconstruct the phase
diagram, via the dependence of the dynamics of Pb atoms on area and height. These dependencies are attributed to stress energy
and quantum size effects. |
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Keywords: | PACS" target="_blank">PACS 68 55 -a Thin film structure and morphology 68 65Hb Quantum dots (patterned in quantum wells 81 16Dn Self-assembly |
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