Anisotropy of the effective mass of 2D electrons in a heterojunction with a lateral superlattice on vicinal faces

The anomalous shift in the maxima of the Shubnikov—de Haas transverse magnetoresistance oscillations in AlGaAs(Si)/GaAs with 2D electrons oriented in the [110] direction with respect to [{ie468-1}10] in large magnetic fields is explained by the formation of a lateral superlattice with an increase of the effective mass (m_[110]* > m_[{ie468-2}]*). Ryazan State Pedagogical University. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, No. 5, pp. 79–82, May, 1998.