Influence of niobium doping on the electrical properties of 0.58Pb(Sc1/2Nb1/2)O3-0.42PbTiO3 single crystal

Piezoelectric single crystals of 0.58Pb(Sc_1/2Nb_1/2)-0.42PbTiO₃ and Nb⁵⁺-doped PSN-PT have been grown using flux technique. It is believed that the addition of Nb⁵⁺ creates lead vacancy in order to compensate charge neutrality. The structural distortion that occured in the doped crystals has been revealed through broadening of some peaks in X-ray diffraction studies. Niobium content that increased from 0.50 to 1.00 mol% might have induced more defect dipoles associated with . This plays a significant role in improving the ferroelectric, dielectric and piezoelectric properties. Our observations clearly show an increase in the spontaneous polarization (P_r), dielectric constant at room temperature, degree of diffuseness and transition temperature (T_c) and also a decrease in coercive field. The reasons behind these enhanced electrical properties are discussed in detail.