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Dispersive processes of light-induced defect creation in hydrogenated amorphous silicon |
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| Authors: | K Morigaki K Takeda P Roca i Cabarrocas |
| Institution: | a Department of Electrical and Digital-System Engineering, Hiroshima Institute of Technology, Miyake, Saeki-ku, Hiroshima 731-5193, Japan b Electro-Chemical and Cancer Institute, Kokuryo, Chofu, Tokyo 182-0022, Japan c Physics Laboratory, Meikai University, Urayasu, Chiba 279-8550, Japan d Laboratoire de Physique des Interfaces et des Couches Minces, CNRS UMR 7647, Ecole Polytechnique, Palaiseau Cedex 91128, France |
| Abstract: | The growing curve of light-induced dangling bonds under illumination has been observed for various intensities of illumination in a-Si:H. It is fitted to a stretched exponential function and then two parameters β and τ involved in the function are estimated as a function of saturated dangling bond density  . The experimental values of β, τ, and  are compared with those calculated based on our model of light-induced defect creation in a-Si:H. |
| Keywords: | 61 43 -j 71 23 Cq 71 55 -i 73 61 Cw 76 30 -v |
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