Computer-aided analysis of double drift region impatt diode

The results calculated by computer for the double drift region IMPATT diode oscillator on the 8 mm waveband are reported in this paper. A comparison between single and double drift devices concerning the power output and efficiency is given. The effect of doping profile, current density and RF voltage on the performances of these devices have also been investigated. The theoretical data of these double drift IMPATT oscillator and amplifier are provided.