Two-dimensional analysis of the interface states effects on current gain for 4H-SiC bipolar junction transistor |
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引用本文: | 张有润,张波,李肇基,邓小川.Two-dimensional analysis of the interface states effects on current gain for 4H-SiC bipolar junction transistor[J].中国物理 B,2010,19(6):67102-067102. |
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作者姓名: | 张有润 张波 李肇基 邓小川 |
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作者单位: | State Key Laboratory of Electronic Thin Films and Integrated
Devices, University of Electronic Science and Technology of China,
Chengdu 610054, China |
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摘 要: | This paper studies two-dimensional analysis of the surface
state effect on current gain for a 4H--SiC bipolar junction
transistor (BJT). Simulation results indicate the mechanism of
current gain degradation, which is surface Fermi level pinning
leading to a strong downward bending of the energy bands to form the
channel of surface electron recombination current. The experimental
results are well-matched with the simulation, which is modeled by
exponential distributions of the interface state density replacing
the single interface state trap. Furthermore, the simulation reveals
that the oxide quality of the base emitter junction interface is very
important for 4H--SiC BJT performance.
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收稿时间: | 2009-09-18 |
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