Temperature dependence of the dielectric strength of zinc sulfide films

The temperature dependence of the dielectric strength E_pn of ZnS:Mn films produced by high-frequency magnetron sputtering was investigated in the range T=20–200°C. It is shown that processes associated with removal of adsorbed water from the ZnS:Mn films are responsible for the maximum on the E_pn=f(T) curve. Data on the temperature dependence of the capacitance and loss-angle are given for thin-film systems based on ZnS:Mn. Tomsk State Academy of Control Systems and Radioelectronics. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 6, pp. 91–94, June, 1966.