Dual-blue light-emitting diode based on strain-compensated InGaN-AlGaN/GaN quantum wells |
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| Authors: | Yan Qi-Rong Yan Qi-Ang Shi Pei-Pei Niu Qiao-Li Li Shu-Ti Zhang Yong |
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| Institution: | Laboratory of Nanophotonic Functional Materials and Devices, Institute of Optoelectronic Materials and Technology, South China Normal University, Guangzhou 510631, China |
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| Abstract: | Strain-compensated InGaN quantum well (QW) active region employing tensile AlGaN barrier is analyzed. Its spectral stability and efficiency droop for dual-blue light-emitting diode (LED) are improved compared with those of the conventional InGaN/GaN QW dual-blue LED based on stacking structure of two In0.18Ga0.82N/GaN QWs and two In0.12Ga0.88N/GaN QWs on the same sapphire substrate. It is found that the optimal performance is achieved when the Al composition of strain-compensated AlGaN layer is 0.12 in blue QW and 0.21 in blue-violet QW. The improvement performance can be attributed to the strain-compensated InGaN-AlGaN/GaN QW that can provide a better carrier confinement and effectively reduce leakage current. |
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| Keywords: | InGaN-AlGaN/GaN quantum well InGaN/GaN quantum well spectral stability dual-blue light-emitting diode |
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