Zur plasmachemischen Umsetzung von GaAs mit CCl4 und CF2Cl2 in Gegenwart von Sauerstoff

The halogen liberation and reaction with GaAs by a plasma discharge in a flow reactor, using CCl₄, CF₂Cl₂ and CCl₄/O₂, CF₂Cl₂/O₂ mixtures was measured. The yields were studied in dependence from the output of a 27 MHz radio-frequency generator and from the oxygen content of the etching gas. A simple model of the kinetics is introduced to discuss the experimental results.