| Abstract: | A new dry photoetching process that dose not required development step had been developed, utilizing the development-free vapor photoetching effect of cinnamate-type photopolymers.1–3 In contrast to obtaining positive patterns with cinnamate-type photopolymers, this process with azide-type photopolymers, which consist of axide crosslinking agent and polymers, gives negative patterns. Some preliminary studies on the development-free vapor photoetching effect of azide-type photopolymers were made. The results indicate that the polymers in this process only play the role of forming a film on the surface of silicon dioxide; and the crosslinking agent is the most important factor, which leads the difference of etching rate between the exposed and unexposed areas. |
